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NVMS5P02R2G
NVMS5P02R2G
MOSFETs NVMS5P02R2G
onsemi
NVMS5P02R2G
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Diodes, Transistors and Thyristors
MOSFETs
NVMS5P02R2G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Dual Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)1
Standard Package NameSOP
Typical Fall Time (ns)90|55
Typical Rise Time (ns)70|25
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)20@4.5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)22|18
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)65|70
Maximum Gate Threshold Voltage (V)1.25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.05
Typical Input Capacitance @ Vds (pF)1375@16V
Maximum Drain Source Resistance (mOhm)33@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 20V 7.05A Automotive 8-Pin SOIC N T/R
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