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NVR4003NT3G
NVR4003NT3G
MOSFETs NVR4003NT3G
onsemi
NVR4003NT3G
--
Diodes, Transistors and Thyristors
MOSFETs
NVR4003NT3G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategorySmall Signal
Supplier PackageSOT-23
Maximum IDSS (uA)1
Standard Package NameSOT
Typical Fall Time (ns)64.2
Typical Rise Time (ns)47.9
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)830
Typical Gate Charge @ Vgs (nC)1.15@5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)19.7
Typical Turn-On Delay Time (ns)16.7
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.1
Typical Turn-Off Delay Time (ns)65.1
Maximum Diode Forward Voltage (V)0.7
Typical Diode Forward Voltage (V)0.65
Typical Gate to Drain Charge (nC)0.23
Maximum Gate Threshold Voltage (V)1.4
Minimum Gate Threshold Voltage (V)0.8
Typical Gate to Source Charge (nC)0.32
Typical Reverse Recovery Time (ns)14
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)21@5V
Maximum Drain Source Resistance (MOhm)1500@4V
Maximum Gate Source Leakage Current (nA)1000
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)1.7
Maximum Power Dissipation on PCB @ TC=25°C (W)0.83
Typical Reverse Transfer Capacitance @ Vds (pF)8.1@5V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)0.5
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)300
Description
Trans MOSFET N-CH 30V 0.5A Automotive 3-Pin SOT-23 T/R
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