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NVR5124PLT1G
NVR5124PLT1G
MOSFETs NVR5124PLT1G
onsemi
NVR5124PLT1G
--
Diodes, Transistors and Thyristors
MOSFETs
NVR5124PLT1G.pdf
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)3.5
Typical Rise Time (ns)10.6
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)470
Typical Gate Charge @ 10V (nC)4.3
Typical Gate Charge @ Vgs (nC)4.3@10V|2.3@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6.6
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)12.2
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.1
Typical Input Capacitance @ Vds (pF)240@25V
Maximum Drain Source Resistance (mOhm)230@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 60V 1.1A Automotive 3-Pin SOT-23 T/R
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