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NX1029X,115
NX1029X,115
MOSFETs NX1029X,115
Nexperia
NX1029X,115
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Diodes, Transistors and Thyristors
MOSFETs
NX1029X,115.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP|N
ConfigurationDual
Package Width1.3(Max)
Package Height0.6(Max)
Package Length1.7(Max)
Product CategorySmall Signal
Supplier PackageSOT-666
Process TechnologyTMOS
Typical Fall Time (ns)7@N Channel|25@P Channel
Typical Rise Time (ns)6@N Channel|11@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)500
Typical Gate Charge @ Vgs (nC)0.5@4.5V@N Channel|0.26@5V@P Channel
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)5@N Channel|13@P Channel
Maximum Drain Source Voltage (V)60@N Channel|50@P Channel
Typical Turn-Off Delay Time (ns)12@N Channel|48@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.33@N Channel|0.17@P Channel
Typical Input Capacitance @ Vds (pF)33@10V@N Channel|24@25V@P Channel
Maximum Drain Source Resistance (mOhm)1600@10V@N Channel|7500@10V@P Channel
Description
Trans MOSFET N/P-CH 60V/50V 0.33A/0.17A Automotive 6-Pin SOT-666 T/R
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