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NX7002AK
NX7002AK
MOSFETs NX7002AK
Nexperia
NX7002AK
--
Diodes, Transistors and Thyristors
MOSFETs
NX7002AK.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Product CategorySmall Signal
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)5
Typical Rise Time (ns)7
Number of Elements per Chip1
Maximum Power Dissipation (mW)325
Typical Gate Charge @ Vgs (nC)0.33@4.5V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)11
Maximum Gate Threshold Voltage (V)2.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.19
Typical Input Capacitance @ Vds (pF)15@10V
Maximum Drain Source Resistance (mOhm)4500@10V
Maximum Gate Source Leakage Current (nA)2000
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
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