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NX7002BKXBZ
NX7002BKXBZ
MOSFETs NX7002BKXBZ
Nexperia
NX7002BKXBZ
--
Diodes, Transistors and Thyristors
MOSFETs
NX7002BKXBZ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1
Package Height0.36(Max)
Package Length1.1
Product CategorySmall Signal
Supplier PackageDFN-B EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)2.9
Typical Rise Time (ns)4.3
Number of Elements per Chip2
Maximum Power Dissipation (mW)407
Typical Gate Charge @ 10V (nC)1
Typical Gate Charge @ Vgs (nC)1@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)4.7
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)6.9
Maximum Gate Threshold Voltage (V)2.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.26
Typical Input Capacitance @ Vds (pF)23.6@10V
Maximum Drain Source Resistance (mOhm)2800@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 60V 0.26A 6-Pin DFN-B EP T/R
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