Product Attribute | Attribute Value |
EU RoHS | Compliant |
Material | SiC |
ECCN (US) | EAR99 |
Packaging | Tray |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Product Category | Power MOSFET |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 119000 |
Typical Gate Charge @ Vgs (nC) | 213.5@20V |
Maximum Gate Source Voltage (V) | 25 |
Maximum Drain Source Voltage (V) | 1200 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -40 |
Maximum Continuous Drain Current (A) | 51 |
Operating Junction Temperature (°C) | -40 to 175 |
Typical Input Capacitance @ Vds (pF) | 2420@800V |
Maximum Drain Source Resistance (MOhm) | 30@20V |
Description |