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NXV55UNR
NXV55UNR
MOSFETs NXV55UNR
Nexperia
NXV55UNR
--
Diodes, Transistors and Thyristors
MOSFETs
NXV55UNR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Product CategorySmall Signal
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)8
Typical Rise Time (ns)13
Number of Elements per Chip1
Maximum Power Dissipation (mW)480
Typical Gate Charge @ Vgs (nC)5.8@4.5V
Maximum Gate Source Voltage (V)8
Typical Turn-On Delay Time (ns)4
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)32
Maximum Gate Threshold Voltage (V)0.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.9
Typical Input Capacitance @ Vds (pF)352@15V
Maximum Drain Source Resistance (mOhm)66@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 1.9A 3-Pin SOT-23 T/R
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