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OM3N100ST
OM3N100ST
MOSFETs OM3N100ST
Infineon
OM3N100ST
--
Diodes, Transistors and Thyristors
MOSFETs
OM3N100ST.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.08(Max)
Package Height10.92(Max)
Package Length10.66(Max)
Product CategoryPower MOSFET
Supplier PackageTO-257AA
Typical Fall Time (ns)75
Typical Rise Time (ns)90
Number of Elements per Chip1
Maximum Power Dissipation (mW)90000
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)90
Maximum Drain Source Voltage (V)1000
Typical Turn-Off Delay Time (ns)115
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.5
Typical Input Capacitance @ Vds (pF)950@25V
Maximum Drain Source Resistance (mOhm)5200@10V
Description
Trans MOSFET N-CH 1KV 3.5A 3-Pin(3+Tab) TO-257AA
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