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PH5330E,115
PH5330E,115
MOSFETs PH5330E,115
Nexperia
PH5330E,115
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Diodes, Transistors and Thyristors
MOSFETs
PH5330E,115.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed4
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width4.1(Max)
Package Height1.1(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageLFPAK
Process TechnologyTMOS
Typical Fall Time (ns)13
Typical Rise Time (ns)22
Number of Elements per Chip1
Maximum Power Dissipation (mW)62500
Typical Gate Charge @ Vgs (nC)21@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)56
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)80
Typical Input Capacitance @ Vds (pF)2010@10V
Maximum Drain Source Resistance (mOhm)5.7@10V
Description
Trans MOSFET N-CH 30V 80A 5-Pin(4+Tab) LFPAK T/R
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