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PHC21025,118
PHC21025,118
MOSFETs PHC21025,118
Nexperia
PHC21025,118
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Diodes, Transistors and Thyristors
MOSFETs
PHC21025,118.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.45(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSO
Maximum IDSS (uA)0.1
Process TechnologyDMOS
Standard Package NameSOP
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)10
Typical Gate Charge @ Vgs (nC)10@10V
Maximum Gate Source Voltage (V)20
Typical Output Capacitance (pF)140
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3@N Channel|3.9@P Channel
Maximum Diode Forward Voltage (V)1.2@N Channel|1.6@P Channel
Typical Gate to Drain Charge (nC)2.5@N Channel|3@P Channel
Maximum Gate Threshold Voltage (V)2.8
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)1
Typical Reverse Recovery Time (ns)35@N Channel|150@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)3.5@N Channel|2.3@P Channel
Operating Junction Temperature (°C)150
Typical Input Capacitance @ Vds (pF)250@20V
Maximum Drain Source Resistance (mOhm)100@10V@N Channel|250@10V@P Channel
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)14@N Channel|10@P Channel
Maximum Power Dissipation on PCB @ TC=25°C (W)2
Typical Reverse Transfer Capacitance @ Vds (pF)50@20V
Description
Trans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SO T/R
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