PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N|P |
Configuration | Dual Dual Drain |
Package Width | 4(Max) |
Package Height | 1.45(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SO |
Maximum IDSS (uA) | 0.1 |
Process Technology | DMOS |
Standard Package Name | SOP |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2000 |
Typical Gate Charge @ 10V (nC) | 10 |
Typical Gate Charge @ Vgs (nC) | 10@10V |
Maximum Gate Source Voltage (V) | 20 |
Typical Output Capacitance (pF) | 140 |
Maximum Drain Source Voltage (V) | 30 |
Typical Gate Plateau Voltage (V) | 3@N Channel|3.9@P Channel |
Maximum Diode Forward Voltage (V) | 1.2@N Channel|1.6@P Channel |
Typical Gate to Drain Charge (nC) | 2.5@N Channel|3@P Channel |
Maximum Gate Threshold Voltage (V) | 2.8 |
Minimum Gate Threshold Voltage (V) | 1 |
Typical Gate to Source Charge (nC) | 1 |
Typical Reverse Recovery Time (ns) | 35@N Channel|150@P Channel |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -65 |
Maximum Continuous Drain Current (A) | 3.5@N Channel|2.3@P Channel |
Operating Junction Temperature (°C) | 150 |
Typical Input Capacitance @ Vds (pF) | 250@20V |
Maximum Drain Source Resistance (mOhm) | 100@10V@N Channel|250@10V@P Channel |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 14@N Channel|10@P Channel |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 50@20V |
Description | |