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PHD108NQ03LT,118
PHD108NQ03LT,118
MOSFETs PHD108NQ03LT,118
NXP
PHD108NQ03LT,118
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyTMOS
Typical Fall Time (ns)25
Typical Rise Time (ns)38
Number of Elements per Chip1
Maximum Power Dissipation (mW)187000
Typical Gate Charge @ Vgs (nC)16.3@4.5V|12.5@4.5V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)32
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)75
Typical Input Capacitance @ Vds (pF)1375@12V|2120@0V
Maximum Drain Source Resistance (mOhm)6@10V
Description
Trans MOSFET N-CH 25V 75A 3-Pin(2+Tab) DPAK T/R
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