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PHN210T,118
PHN210T,118
MOSFETs PHN210T,118
Nexperia
PHN210T,118
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Diodes, Transistors and Thyristors
MOSFETs
PHN210T,118.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.45(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSO
Maximum IDSS (uA)0.1
Process TechnologyTMOS
Standard Package NameSOP
Typical Fall Time (ns)15
Typical Rise Time (ns)8
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)6
Typical Gate Charge @ Vgs (nC)6@10V
Maximum Gate Source Voltage (V)20
Typical Output Capacitance (pF)88
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.4
Typical Turn-Off Delay Time (ns)21
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.82
Typical Gate to Drain Charge (nC)0.7
Maximum Gate Threshold Voltage (V)2.8
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)0.7
Typical Reverse Recovery Time (ns)69
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)3.4
Operating Junction Temperature (°C)-65 to 150
Typical Input Capacitance @ Vds (pF)250@20V
Typical Reverse Recovery Charge (nC)55
Maximum Drain Source Resistance (mOhm)100@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)14
Maximum Power Dissipation on PCB @ TC=25°C (W)2
Typical Reverse Transfer Capacitance @ Vds (pF)54@20V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)3.4
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)62.5
Description
Trans MOSFET N-CH 30V 3.4A 8-Pin SO T/R
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