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MOSFETs PHT4NQ10LT,135
NXP
PHT4NQ10LT,135
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Drain |
| Package Width | 3.7(Max) |
| Package Height | 1.7(Max) |
| Package Length | 6.7(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SC-73 |
| Process Technology | TMOS |
| Typical Fall Time (ns) | 21 |
| Typical Rise Time (ns) | 10 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 6900 |
| Typical Gate Charge @ Vgs (nC) | 6.8@5V |
| Maximum Gate Source Voltage (V) | 16 |
| Typical Turn-On Delay Time (ns) | 4 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 52 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 3.5 |
| Typical Input Capacitance @ Vds (pF) | 374@25V |
| Maximum Drain Source Resistance (MOhm) | 250@5V |
| Description |
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