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PMCM6501UNEZ
PMCM6501UNEZ
MOSFETs PMCM6501UNEZ
Nexperia
PMCM6501UNEZ
--
Diodes, Transistors and Thyristors
MOSFETs
PMCM6501UNEZ.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain Triple Source
Package Width0.98
Package Height0.15
Package Length1.48
Product CategoryPower MOSFET
Supplier PackageWLCSP
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)46
Typical Rise Time (ns)28
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Typical Gate Charge @ Vgs (nC)19@4.5V
Maximum Gate Source Voltage (V)8
Typical Turn-On Delay Time (ns)7.3
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)100
Maximum Gate Threshold Voltage (V)0.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.6
Typical Input Capacitance @ Vds (pF)105@10V
Maximum Drain Source Resistance (MOhm)21@4.5V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 20V 6.6A 6-Pin WLCSP T/R
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