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MOSFETs PMDT290UCE,115
Nexperia
PMDT290UCE,115
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 1.3(Max) |
| Package Height | 0.6(Max) |
| Package Length | 1.7(Max) |
| Product Category | Small Signal |
| Supplier Package | SOT-666 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TMOS |
| Typical Fall Time (ns) | 31@N Channel|72@P Channel |
| Typical Rise Time (ns) | 4@N Channel|30@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 500 |
| Typical Gate Charge @ Vgs (nC) | 0.45@4.5V@N Channel|0.76@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | 8 |
| Typical Turn-On Delay Time (ns) | 6@N Channel|18@P Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 86@N Channel|80@P Channel |
| Maximum Gate Threshold Voltage (V) | 0.95@N Channel|1.3@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.8@N Channel|0.55@P Channel |
| Typical Input Capacitance @ Vds (pF) | 55@10V@N Channel|58@10V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 380@4.5V@N Channel|850@4.5V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 2000 |
| Description |
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