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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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PMDT290UCE,115
PMDT290UCE,115
MOSFETs PMDT290UCE,115
Nexperia
PMDT290UCE,115
--
Diodes, Transistors and Thyristors
MOSFETs
PMDT290UCE,115.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width1.3(Max)
Package Height0.6(Max)
Package Length1.7(Max)
Product CategorySmall Signal
Supplier PackageSOT-666
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)31@N Channel|72@P Channel
Typical Rise Time (ns)4@N Channel|30@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)500
Typical Gate Charge @ Vgs (nC)0.45@4.5V@N Channel|0.76@4.5V@P Channel
Maximum Gate Source Voltage (V)8
Typical Turn-On Delay Time (ns)6@N Channel|18@P Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)86@N Channel|80@P Channel
Maximum Gate Threshold Voltage (V)0.95@N Channel|1.3@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.8@N Channel|0.55@P Channel
Typical Input Capacitance @ Vds (pF)55@10V@N Channel|58@10V@P Channel
Maximum Drain Source Resistance (mOhm)380@4.5V@N Channel|850@4.5V@P Channel
Maximum Gate Source Leakage Current (nA)2000
Description
Trans MOSFET N/P-CH 20V 0.8A/0.55A Automotive 6-Pin SOT-666 T/R
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