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PMDXB550UNEZ
PMDXB550UNEZ
MOSFETs PMDXB550UNEZ
NXP
PMDXB550UNEZ
--
Diodes, Transistors and Thyristors
MOSFETs
PMDXB550UNEZ.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPUnknown
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveUnknown
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width1
Package Height0.36(Max)
Package Length1.1
Product CategorySmall Signal
Supplier PackageDFN-B EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)3
Typical Rise Time (ns)7
Number of Elements per Chip2
Maximum Power Dissipation (mW)410
Typical Gate Charge @ Vgs (nC)0.6@4.5V
Maximum Gate Source Voltage (V)8
Typical Turn-On Delay Time (ns)4
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)12
Maximum Gate Threshold Voltage (V)0.95
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)590
Typical Input Capacitance @ Vds (pF)30.3@15V
Maximum Drain Source Resistance (MOhm)670@4.5V
Maximum Gate Source Leakage Current (nA)5000
Description
Trans MOSFET N-CH 30V 590A Automotive 6-Pin DFN-B EP T/R
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