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PMGD290XN,115
PMGD290XN,115
MOSFETs PMGD290XN,115
NXP
PMGD290XN,115
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.35(Max)
Package Height1(Max)
Package Length2.2(Max)
Product CategoryPower MOSFET
Supplier PackageTSSOP
Process TechnologyTMOS
Typical Fall Time (ns)6
Typical Rise Time (ns)11
Number of Elements per Chip2
Maximum Power Dissipation (mW)410
Typical Gate Charge @ Vgs (nC)0.72@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)11
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.86
Typical Input Capacitance @ Vds (pF)34@20V
Maximum Drain Source Resistance (MOhm)350@4.5V
Description
Trans MOSFET N-CH 20V 0.86A 6-Pin TSSOP T/R
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