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PMN23UN,165
PMN23UN,165
MOSFETs PMN23UN,165
NXP
PMN23UN,165
--
Diodes, Transistors and Thyristors
MOSFETs
PMN23UN,165.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width1.7(Max)
Package Height1(Max)
Package Length3.1(Max)
Product CategoryPower MOSFET
Supplier PackageTSOP
Process TechnologyTMOS
Typical Fall Time (ns)16
Typical Rise Time (ns)14.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)1750
Typical Gate Charge @ Vgs (nC)10.6@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)8.5
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)55
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.3
Typical Input Capacitance @ Vds (pF)740@10V
Maximum Drain Source Resistance (mOhm)28@4.5V
Description
Trans MOSFET N-CH 20V 6.3A 6-Pin TSOP T/R
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