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PMPB10XNEZ
PMPB10XNEZ
MOSFETs PMPB10XNEZ
Nexperia
PMPB10XNEZ
--
Diodes, Transistors and Thyristors
MOSFETs
PMPB10XNEZ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width2.1(Max)
Package Height0.61(Max)
Package Length2.1(Max)
Product CategoryPower MOSFET
Supplier PackageDFN-MD EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameDFN
Typical Fall Time (ns)50
Typical Rise Time (ns)35
Number of Elements per Chip1
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ Vgs (nC)23@4.5V
Maximum Gate Source Voltage (V)12
Typical Output Capacitance (pF)235
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.3
Typical Turn-Off Delay Time (ns)54
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.6
Typical Gate to Drain Charge (nC)4.5
Maximum Gate Threshold Voltage (V)0.9
Minimum Gate Threshold Voltage (V)0.4
Typical Gate Threshold Voltage (V)0.65
Typical Gate to Source Charge (nC)2.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)2175@10V
Maximum Drain Source Resistance (mOhm)14@4.5V
Maximum Gate Source Leakage Current (nA)10000
Maximum Positive Gate Source Voltage (V)12
Maximum Pulsed Drain Current @ TC=25°C (A)36
Maximum Power Dissipation on PCB @ TC=25°C (W)3.5
Typical Reverse Transfer Capacitance @ Vds (pF)205@10V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)9
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)270
Description
Trans MOSFET N-CH 20V 9A 6-Pin DFN-MD EP
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