PPAP | No |
SVHC | Yes |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Pin Count | 6 |
Automotive | No |
PCB changed | 6 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain |
Package Width | 2.1(Max) |
Package Height | 0.61(Max) |
Package Length | 2.1(Max) |
Product Category | Power MOSFET |
Supplier Package | DFN-MD EP |
Maximum IDSS (uA) | 1 |
Process Technology | TMOS |
Standard Package Name | DFN |
Typical Fall Time (ns) | 50 |
Typical Rise Time (ns) | 35 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 3500 |
Typical Gate Charge @ Vgs (nC) | 23@4.5V |
Maximum Gate Source Voltage (V) | 12 |
Typical Output Capacitance (pF) | 235 |
Typical Turn-On Delay Time (ns) | 13 |
Maximum Drain Source Voltage (V) | 20 |
Typical Gate Plateau Voltage (V) | 1.3 |
Typical Turn-Off Delay Time (ns) | 54 |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Diode Forward Voltage (V) | 0.6 |
Typical Gate to Drain Charge (nC) | 4.5 |
Maximum Gate Threshold Voltage (V) | 0.9 |
Minimum Gate Threshold Voltage (V) | 0.4 |
Typical Gate Threshold Voltage (V) | 0.65 |
Typical Gate to Source Charge (nC) | 2.6 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 9 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 2175@10V |
Maximum Drain Source Resistance (mOhm) | 14@4.5V |
Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum Positive Gate Source Voltage (V) | 12 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 36 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.5 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 205@10V |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 9 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 270 |
Description | |