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PMPB12R7EPX
PMPB12R7EPX
MOSFETs PMPB12R7EPX
Nexperia
PMPB12R7EPX
--
Diodes, Transistors and Thyristors
MOSFETs
PMPB12R7EPX.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quint Drain Dual Source
Package Width2
Package Height0.58
Package Length2
Product CategoryPower MOSFET
Supplier PackageDFN-M EP
Process TechnologyTMOS
Typical Fall Time (ns)27
Typical Rise Time (ns)5
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ 10V (nC)33
Typical Gate Charge @ Vgs (nC)33@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)3
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)67
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.7
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1638@15V
Maximum Drain Source Resistance (mOhm)15.5@10V
Description
Trans MOSFET P-CH 30V 8.7A 6-Pin DFN-M EP T/R
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