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PMT280ENEAX
PMT280ENEAX
MOSFETs PMT280ENEAX
Nexperia
PMT280ENEAX
--
Diodes, Transistors and Thyristors
MOSFETs
PMT280ENEAX.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.7(Max)
Package Height1.7(Max)
Package Length6.7(Max)
Product CategoryPower MOSFET
Supplier PackageSC-73
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSC
Typical Fall Time (ns)2
Typical Rise Time (ns)7
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)1920
Typical Gate Charge @ 10V (nC)4.5
Typical Gate Charge @ Vgs (nC)4.5@10V
Maximum Gate Source Voltage (V)20
Typical Output Capacitance (pF)13
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)2.3
Typical Turn-Off Delay Time (ns)9
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.9
Typical Gate to Drain Charge (nC)1
Maximum Gate Threshold Voltage (V)2.7
Minimum Gate Threshold Voltage (V)1.3
Typical Gate Threshold Voltage (V)1.7
Typical Gate to Source Charge (nC)0.4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)195@50V
Maximum Drain Source Resistance (MOhm)385@10V
Maximum Gate Source Leakage Current (nA)15000
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)6
Maximum Power Dissipation on PCB @ TC=25°C (W)1.92
Typical Reverse Transfer Capacitance @ Vds (pF)9@50V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)1.5
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)162
Description
Trans MOSFET N-CH 100V 1.5A Automotive 4-Pin(3+Tab) SC-73 T/R
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