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PMV32UP/MIR
PMV32UP/MIR
MOSFETs PMV32UP/MIR
Nexperia
PMV32UP/MIR
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Diodes, Transistors and Thyristors
MOSFETs
PMV32UP/MIR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Product CategorySmall Signal
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)33
Typical Rise Time (ns)21
Number of Elements per Chip1
Maximum Power Dissipation (mW)930
Typical Gate Charge @ Vgs (nC)15.5@4.5V
Maximum Gate Source Voltage (V)8
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)95
Maximum Gate Threshold Voltage (V)0.95
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4
Typical Input Capacitance @ Vds (pF)1890@10V
Maximum Drain Source Resistance (mOhm)36@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R
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