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PMV56XN,215
PMV56XN,215
MOSFETs PMV56XN,215
Nexperia
PMV56XN,215
--
Diodes, Transistors and Thyristors
MOSFETs
PMV56XN,215.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)34
Typical Rise Time (ns)23
Number of Elements per Chip1
Maximum Power Dissipation (mW)1920
Typical Gate Charge @ Vgs (nC)5.4@4.5V
Maximum Gate Source Voltage (V)±8
Typical Output Capacitance (pF)125
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)50
Typical Gate to Drain Charge (nC)1.6
Maximum Gate Threshold Voltage (V)0.65(Min)
Typical Gate to Source Charge (nC)0.65
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)3.76
Typical Input Capacitance @ Vds (pF)230@10V
Maximum Drain Source Resistance (mOhm)85@4.5V
Description
Trans MOSFET N-CH 20V 3.76A 3-Pin SOT-23 T/R
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