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PMXB360ENEAZ
PMXB360ENEAZ
MOSFETs PMXB360ENEAZ
Nexperia
PMXB360ENEAZ
--
Diodes, Transistors and Thyristors
MOSFETs
PMXB360ENEAZ.pdf
Specification
Product AttributeAttribute Value
PPAPYes
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1
Package Height0.36(Max)
Package Length1.1
Product CategorySmall Signal
Supplier PackageDFN-D EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)3
Typical Rise Time (ns)3.5
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)1070
Typical Gate Charge @ 10V (nC)3
Typical Gate Charge @ Vgs (nC)3@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)2
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)9
Maximum Gate Threshold Voltage (V)2.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.1
Typical Input Capacitance @ Vds (pF)130@40V
Maximum Drain Source Resistance (mOhm)450@10V
Maximum Gate Source Leakage Current (nA)15000
Description
Trans MOSFET N-CH 80V 1.1A Automotive 3-Pin DFN-D EP T/R
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