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PMZB350UPE,315
PMZB350UPE,315
MOSFETs PMZB350UPE,315
Nexperia
PMZB350UPE,315
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width0.6
Package Height0.36(Max)
Package Length1
Product CategorySmall Signal
Supplier PackageDFN-B
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)9
Typical Rise Time (ns)5
Number of Elements per Chip1
Maximum Power Dissipation (mW)715
Typical Gate Charge @ Vgs (nC)1.3@4.5V
Maximum Gate Source Voltage (V)8
Typical Turn-On Delay Time (ns)4
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)26
Maximum Gate Threshold Voltage (V)0.95
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1
Typical Input Capacitance @ Vds (pF)127@10V
Maximum Drain Source Resistance (mOhm)450@4.5V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET P-CH 20V 1A 3-Pin DFN-B T/R
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