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PSMN017-30PL,127
PSMN017-30PL,127
MOSFETs PSMN017-30PL,127
Nexperia
PSMN017-30PL,127
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.3(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)1
Standard Package NameTO-220
Typical Fall Time (ns)5.1
Typical Rise Time (ns)9.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)45000
Typical Gate Charge @ 10V (nC)10.7
Typical Gate Charge @ Vgs (nC)10.7@10V|9.55@10V|5.1@4.5V
Maximum Gate Source Voltage (V)20
Typical Output Capacitance (pF)127
Typical Turn-On Delay Time (ns)10.7
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.86
Typical Turn-Off Delay Time (ns)11.4
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.89
Typical Gate to Drain Charge (nC)1.94
Maximum Gate Threshold Voltage (V)2.15
Minimum Gate Threshold Voltage (V)1.3
Typical Gate Threshold Voltage (V)1.7
Typical Gate to Source Charge (nC)1.52
Typical Reverse Recovery Time (ns)17.3
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)32
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)552@15V
Typical Reverse Recovery Charge (nC)6.5
Maximum Drain Source Resistance (mOhm)17@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)152
Typical Reverse Transfer Capacitance @ Vds (pF)64@15V
Description
Trans MOSFET N-CH 30V 32A 3-Pin(3+Tab) TO-220AB Rail
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