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PSMN063-150D,118
PSMN063-150D,118
MOSFETs PSMN063-150D,118
Nexperia
PSMN063-150D,118
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)10
Process TechnologyTMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)38
Typical Rise Time (ns)50
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ 10V (nC)55
Typical Gate Charge @ Vgs (nC)55@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)240
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)150
Typical Gate Plateau Voltage (V)4.7
Typical Turn-Off Delay Time (ns)48
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.9
Typical Gate to Drain Charge (nC)20
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)10
Typical Reverse Recovery Time (ns)105
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)29
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)2390@25V
Typical Reverse Recovery Charge (nC)550
Maximum Drain Source Resistance (mOhm)63@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)116
Typical Reverse Transfer Capacitance @ Vds (pF)98@25V
Description
Trans MOSFET N-CH Si 150V 29A 3-Pin(2+Tab) DPAK T/R
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