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PSMN2R6-60PS
PSMN2R6-60PS
MOSFETs PSMN2R6-60PS
NXP
PSMN2R6-60PS
--
Diodes, Transistors and Thyristors
MOSFETs
PSMN2R6-60PS.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.3(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)1
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)58
Typical Rise Time (ns)50
Number of Elements per Chip1
Maximum Power Dissipation (mW)326000
Typical Gate Charge @ 10V (nC)140
Typical Gate Charge @ Vgs (nC)140@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)32
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)87
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)150
Typical Input Capacitance @ Vds (pF)7629@25V
Maximum Drain Source Resistance (mOhm)2.6@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 150A 3-Pin(3+Tab) TO-220AB
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