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MOSFETs PSMN7R8-120ESQ
Nexperia
PSMN7R8-120ESQ
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Rail |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.5(Max) |
| Package Height | 9.4(Max) |
| Package Length | 10.3(Max) |
| Product Category | Power MOSFET |
| Supplier Package | I2PAK |
| Maximum IDSS (uA) | 1 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 60.8 |
| Typical Rise Time (ns) | 55.3 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 349000 |
| Typical Gate Charge @ 10V (nC) | 167 |
| Typical Gate Charge @ Vgs (nC) | 167@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 45.5 |
| Maximum Drain Source Voltage (V) | 120 |
| Typical Turn-Off Delay Time (ns) | 151.8 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 70 |
| Typical Input Capacitance @ Vds (pF) | 9473@60V |
| Maximum Drain Source Resistance (MOhm) | 7.9@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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