Tab | Tab |
EU RoHS | Compliant with Exemption |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 5 |
PCB changed | 4 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Triple Source |
Package Width | 6.3(Max) |
Package Height | 1.7(Max) |
Package Length | 8.1(Max) |
Product Category | Power MOSFET |
Supplier Package | LFPAK |
Maximum IDSS (uA) | 2 |
Process Technology | NextPowerS3 |
Standard Package Name | FPAK |
Typical Fall Time (ns) | 48 |
Typical Rise Time (ns) | 33 |
Number of Elements per Chip | 1 |
Maximum Gate Resistance (Ohm) | 2.31 |
Minimum Gate Resistance (Ohm) | 0.37 |
Maximum Power Dissipation (mW) | 375000 |
Typical Gate Charge @ 10V (nC) | 190 |
Typical Gate Charge @ Vgs (nC) | 190@10V |
Maximum Gate Source Voltage (V) | 20 |
Typical Output Capacitance (pF) | 2718 |
Typical Turn-On Delay Time (ns) | 40 |
Maximum Drain Source Voltage (V) | 40 |
Typical Gate Plateau Voltage (V) | 4 |
Typical Turn-Off Delay Time (ns) | 117 |
Maximum Diode Forward Voltage (V) | 1 |
Typical Diode Forward Voltage (V) | 0.79 |
Typical Gate to Drain Charge (nC) | 32 |
Maximum Gate Threshold Voltage (V) | 3.6 |
Minimum Gate Threshold Voltage (V) | 2.4 |
Typical Gate Threshold Voltage (V) | 3 |
Typical Gate to Source Charge (nC) | 51 |
Typical Reverse Recovery Time (ns) | 62 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 500 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 15116@25V |
Typical Reverse Recovery Charge (nC) | 93 |
Maximum Drain Source Resistance (mOhm) | 0.55@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 2237 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 544@25V |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 500 |
Description | |