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PSMNR55-40SSHJ
PSMNR55-40SSHJ
MOSFETs PSMNR55-40SSHJ
Nexperia
PSMNR55-40SSHJ
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width6.3(Max)
Package Height1.7(Max)
Package Length8.1(Max)
Product CategoryPower MOSFET
Supplier PackageLFPAK
Maximum IDSS (uA)2
Process TechnologyNextPowerS3
Standard Package NameFPAK
Typical Fall Time (ns)48
Typical Rise Time (ns)33
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)2.31
Minimum Gate Resistance (Ohm)0.37
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ 10V (nC)190
Typical Gate Charge @ Vgs (nC)190@10V
Maximum Gate Source Voltage (V)20
Typical Output Capacitance (pF)2718
Typical Turn-On Delay Time (ns)40
Maximum Drain Source Voltage (V)40
Typical Gate Plateau Voltage (V)4
Typical Turn-Off Delay Time (ns)117
Maximum Diode Forward Voltage (V)1
Typical Diode Forward Voltage (V)0.79
Typical Gate to Drain Charge (nC)32
Maximum Gate Threshold Voltage (V)3.6
Minimum Gate Threshold Voltage (V)2.4
Typical Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)51
Typical Reverse Recovery Time (ns)62
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)500
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)15116@25V
Typical Reverse Recovery Charge (nC)93
Maximum Drain Source Resistance (mOhm)0.55@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)2237
Typical Reverse Transfer Capacitance @ Vds (pF)544@25V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)500
Description
Trans MOSFET N-CH 40V 500A 5-Pin(4+Tab) LFPAK T/R
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