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PXN8R3-30QLJ
PXN8R3-30QLJ
MOSFETs PXN8R3-30QLJ
Nexperia
PXN8R3-30QLJ
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Diodes, Transistors and Thyristors
MOSFETs
PXN8R3-30QLJ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3
Package Height0.8
Package Length3.15
Product CategoryPower MOSFET
Supplier PackageMLPAK33 EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)3
Typical Rise Time (ns)8
Number of Elements per Chip1
Maximum Power Dissipation (mW)4300
Typical Gate Charge @ 10V (nC)10.6
Typical Gate Charge @ Vgs (nC)5.1@4.5V|10.6@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)6
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11.4
Typical Input Capacitance @ Vds (pF)760@15V
Maximum Drain Source Resistance (mOhm)8.3@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 11.4A 8-Pin MLPAK33 EP T/R
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