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RFD10P03LSM
RFD10P03LSM
MOSFETs RFD10P03LSM
onsemi
RFD10P03LSM
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Diodes, Transistors and Thyristors
MOSFETs
RFD10P03LSM.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyMegaFET
Standard Package NameTO-252
Typical Fall Time (ns)20
Typical Rise Time (ns)50
Number of Elements per Chip1
Maximum Power Dissipation (mW)65000
Typical Gate Charge @ 10V (nC)25
Typical Gate Charge @ Vgs (nC)25@10V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)35
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Typical Input Capacitance @ Vds (pF)1035@25V
Maximum Drain Source Resistance (MOhm)200@5V
Description
Trans MOSFET P-CH Si 30V 10A 3-Pin(2+Tab) DPAK
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