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MOSFETs RFD12N06RLESM9A
onsemi
RFD12N06RLESM9A
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 6.22(Max) |
| Package Height | 2.39(Max) |
| Package Length | 6.73(Max) |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | UltraFET |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 37|50 |
| Typical Rise Time (ns) | 89|5.3 |
| Typical Switch Charge (nC) | 89 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 49000 |
| Typical Gate Charge @ 10V (nC) | 12 |
| Typical Gate Charge @ Vgs (nC) | 12@10V |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Output Capacitance (pF) | 485@25V |
| Typical Turn-On Delay Time (ns) | 5.3|13 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 41|22 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 18 |
| Typical Input Capacitance @ Vds (pF) | 485@25V |
| Maximum Drain Source Resistance (mOhm) | 63@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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