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RFD14N05
RFD14N05
MOSFETs RFD14N05
onsemi
RFD14N05
--
Diodes, Transistors and Thyristors
MOSFETs
RFD14N05.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.5(Max)
Package Height6.3(Max)
Package Length6.8(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Process TechnologyMegaFET
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)17
Typical Rise Time (ns)26
Number of Elements per Chip1
Maximum Power Dissipation (mW)48000
Typical Gate Charge @ Vgs (nC)40(Max)@20V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)185
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)50
Typical Turn-Off Delay Time (ns)45
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)14
Typical Input Capacitance @ Vds (pF)570@25V
Maximum Drain Source Resistance (MOhm)100@10V
Description
Trans MOSFET N-CH Si 50V 14A 3-Pin(3+Tab) IPAK Rail
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