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MOSFETs RFD14N05LSM9A
onsemi
RFD14N05LSM9A
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 6.22(Max) |
| Package Height | 2.39(Max) |
| Package Length | 6.73(Max) |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Process Technology | MegaFET |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 16 |
| Typical Rise Time (ns) | 24 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 48000 |
| Typical Gate Charge @ 10V (nC) | 40(Max) |
| Typical Gate Charge @ Vgs (nC) | 40(Max)@10V|25(Max)@5V |
| Maximum Gate Source Voltage (V) | ±10 |
| Typical Output Capacitance (pF) | 185 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Drain Source Voltage (V) | 50 |
| Typical Turn-Off Delay Time (ns) | 42 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 14 |
| Typical Input Capacitance @ Vds (pF) | 670@25V |
| Maximum Drain Source Resistance (mOhm) | 100@5V |
| Description |
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