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RFP22N10
RFP22N10
MOSFETs RFP22N10
onsemi
RFP22N10
--
Diodes, Transistors and Thyristors
MOSFETs
RFP22N10.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Standard Package NameTO-220
Typical Fall Time (ns)18
Typical Rise Time (ns)24
Number of Elements per Chip1
Maximum Power Dissipation (mW)100000
Typical Gate Charge @ Vgs (nC)150(Max)@20V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)65
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)22
Maximum Drain Source Resistance (mOhm)80@10V
Description
Trans MOSFET N-CH Si 100V 22A 3-Pin(3+Tab) TO-220AB
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