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RFP30N06LE
RFP30N06LE
MOSFETs RFP30N06LE
onsemi
RFP30N06LE
--
Diodes, Transistors and Thyristors
MOSFETs
RFP30N06LE.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.4(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyMegaFET
Typical Fall Time (ns)40
Typical Rise Time (ns)88
Number of Elements per Chip1
Maximum Power Dissipation (mW)96000
Typical Gate Charge @ Vgs (nC)1350@25V
Maximum Gate Source Voltage (V)10
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)30
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30
Typical Input Capacitance @ Vds (pF)1350@25V
Maximum Drain Source Resistance (mOhm)47@5V
Description
Trans MOSFET N-CH Si 60V 30A 3-Pin(3+Tab) TO-220AB Rail
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