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SCT040H65G3AG
SCT040H65G3AG
MOSFETs SCT040H65G3AG
STMicroelectronics
SCT040H65G3AG
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MaterialSiC
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
PCB changed7
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Source
Package Width8.9(Max)
Package Height4.8(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageH2PAK
Typical Fall Time (ns)12.3
Typical Rise Time (ns)12.3
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)234000
Typical Gate Charge @ Vgs (nC)35@18V
Maximum Gate Source Voltage (V)22
Typical Turn-On Delay Time (ns)7.1
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)14.7
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)938@400V
Maximum Drain Source Resistance (mOhm)55@18V
Description
Trans MOSFET N-CH SiC 650V 30A Automotive 8-Pin(7+Tab) H2PAK T/R
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