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MOSFETs SCT070H120G3AG
STMicroelectronics
SCT070H120G3AG
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Material | SiC |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| PCB changed | 7 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Hex Source |
| Package Width | 8.9(Max) |
| Package Height | 4.8(Max) |
| Package Length | 10.4(Max) |
| Product Category | Power MOSFET |
| Supplier Package | H2PAK |
| Typical Fall Time (ns) | 9.9 |
| Typical Rise Time (ns) | 26.6 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 223000 |
| Typical Gate Charge @ Vgs (nC) | 37@18V |
| Maximum Gate Source Voltage (V) | 22 |
| Typical Turn-On Delay Time (ns) | 18.7 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 17.6 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 30 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 900@850V |
| Maximum Drain Source Resistance (mOhm) | 87@18V |
| Description |
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