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SCT1000N170
SCT1000N170
MOSFETs SCT1000N170
STMicroelectronics
SCT1000N170
--
Diodes, Transistors and Thyristors
MOSFETs
SCT1000N170.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.15(Max)
Package Height20.15(Max)
Package Length15.75(Max)
Product CategoryPower MOSFET
Supplier PackageHIP-247
SVHC Exceeds ThresholdYes
Number of Elements per Chip1
Maximum Power Dissipation (mW)120000
Typical Gate Charge @ Vgs (nC)14@20V
Maximum Gate Source Voltage (V)25
Maximum Drain Source Voltage (V)1700
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6
Typical Input Capacitance @ Vds (pF)150@1000V
Maximum Drain Source Resistance (mOhm)1500@20V
Description
Trans MOSFET N-CH SiC 1.7KV 6A 3-Pin HIP-247 Tube
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