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SCT10N120
SCT10N120
MOSFETs SCT10N120
STMicroelectronics
SCT10N120
--
Diodes, Transistors and Thyristors
MOSFETs
SCT10N120.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.15(Max)
Package Height20.15(Max)
Package Length15.75(Max)
Product CategoryPower MOSFET
Supplier PackageHIP-247
Maximum IDSS (uA)10
Typical Fall Time (ns)17
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ Vgs (nC)22@20V
Maximum Gate Source Voltage (V)25
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)14
Maximum Gate Threshold Voltage (V)3.5(Typ)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Typical Input Capacitance @ Vds (pF)290@400V
Maximum Drain Source Resistance (mOhm)690@20V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
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