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SCTW35N65G2V
SCTW35N65G2V
MOSFETs SCTW35N65G2V
STMicroelectronics
SCTW35N65G2V
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Diodes, Transistors and Thyristors
MOSFETs
SCTW35N65G2V.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.15(Max)
Package Height20.15(Max)
Package Length15.75(Max)
Product CategoryPower MOSFET
Supplier PackageHIP-247
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)9
Typical Rise Time (ns)14
Number of Elements per Chip1
Maximum Power Dissipation (mW)208000
Typical Gate Charge @ Vgs (nC)73@20V
Maximum Gate Source Voltage (V)22
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)35
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)45
Typical Input Capacitance @ Vds (pF)1370@400V
Maximum Drain Source Resistance (mOhm)67@20V
Description
Trans MOSFET N-CH SiC 650V 45A 3-Pin HIP-247 Tube
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