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MOSFETs SCTW60N120G2
STMicroelectronics
SCTW60N120G2
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Material | SiC |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 5 |
| Package Height | 20 |
| Package Length | 15.6 |
| Product Category | Power MOSFET |
| Supplier Package | HIP-247 |
| Maximum IDSS (uA) | 10 |
| Typical Fall Time (ns) | 14 |
| Typical Rise Time (ns) | 16 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 388000 |
| Typical Gate Charge @ Vgs (nC) | 94@18V |
| Maximum Gate Source Voltage (V) | 22 |
| Typical Turn-On Delay Time (ns) | 16 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 32 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 60 |
| Typical Input Capacitance @ Vds (pF) | 1969@800V |
| Maximum Drain Source Resistance (MOhm) | 52@18V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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