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MOSFETs SCTW60N120G2AG
STMicroelectronics
SCTW60N120G2AG
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Material | SiC |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 5 |
| Package Height | 20 |
| Package Length | 15.6 |
| Product Category | Power MOSFET |
| Supplier Package | HIP-247 |
| Maximum IDSS (uA) | 10 |
| Standard Package Name | HIP-247 |
| SVHC Exceeds Threshold | Yes |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 388000 |
| Typical Gate Charge @ Vgs (nC) | 101@18V |
| Maximum Gate Source Voltage (V) | 22 |
| Typical Output Capacitance (pF) | 90 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Gate Plateau Voltage (V) | 6.25 |
| Typical Diode Forward Voltage (V) | 3.5 |
| Typical Gate to Drain Charge (nC) | 23 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Minimum Gate Threshold Voltage (V) | 1.9 |
| Typical Gate Threshold Voltage (V) | 3.1 |
| Typical Gate to Source Charge (nC) | 36 |
| Typical Reverse Recovery Time (ns) | 53 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 52 |
| Operating Junction Temperature (°C) | -55 to 200 |
| Typical Input Capacitance @ Vds (pF) | 2086@800V |
| Typical Reverse Recovery Charge (nC) | 192 |
| Maximum Drain Source Resistance (mOhm) | 58@18V |
| Maximum Gate Source Leakage Current (nA) | 20(Typ) |
| Maximum Positive Gate Source Voltage (V) | 22 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 156 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 18@800V |
| Description |
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