Tab | Tab |
PPAP | Unknown |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | SiC |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | Unknown |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 5 |
Package Height | 20 |
Package Length | 15.6 |
Product Category | Power MOSFET |
Supplier Package | HIP-247 |
Maximum IDSS (uA) | 10 |
Standard Package Name | HIP-247 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 38 |
Typical Rise Time (ns) | 16 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 565000 |
Typical Gate Charge @ Vgs (nC) | 157@18V |
Maximum Gate Source Voltage (V) | 22 |
Typical Output Capacitance (pF) | 294 |
Typical Turn-On Delay Time (ns) | 26 |
Maximum Drain Source Voltage (V) | 650 |
Typical Gate Plateau Voltage (V) | 5.5 |
Typical Turn-Off Delay Time (ns) | 58 |
Typical Diode Forward Voltage (V) | 2.5 |
Typical Gate to Drain Charge (nC) | 42 |
Maximum Gate Threshold Voltage (V) | 5 |
Minimum Gate Threshold Voltage (V) | 1.9 |
Typical Gate Threshold Voltage (V) | 3.2 |
Typical Gate to Source Charge (nC) | 43 |
Typical Reverse Recovery Time (ns) | 17 |
Maximum Operating Temperature (°C) | 200 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 119 |
Operating Junction Temperature (°C) | -55 to 200 |
Typical Input Capacitance @ Vds (pF) | 3380@400V |
Typical Reverse Recovery Charge (nC) | 308 |
Maximum Drain Source Resistance (mOhm) | 24@18V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 22 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 220 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 49@400V |
Description | |