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SCTW90N65G2V
SCTW90N65G2V
MOSFETs SCTW90N65G2V
STMicroelectronics
SCTW90N65G2V
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Diodes, Transistors and Thyristors
MOSFETs
SCTW90N65G2V.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveUnknown
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5
Package Height20
Package Length15.6
Product CategoryPower MOSFET
Supplier PackageHIP-247
Maximum IDSS (uA)10
Standard Package NameHIP-247
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)38
Typical Rise Time (ns)16
Number of Elements per Chip1
Maximum Power Dissipation (mW)565000
Typical Gate Charge @ Vgs (nC)157@18V
Maximum Gate Source Voltage (V)22
Typical Output Capacitance (pF)294
Typical Turn-On Delay Time (ns)26
Maximum Drain Source Voltage (V)650
Typical Gate Plateau Voltage (V)5.5
Typical Turn-Off Delay Time (ns)58
Typical Diode Forward Voltage (V)2.5
Typical Gate to Drain Charge (nC)42
Maximum Gate Threshold Voltage (V)5
Minimum Gate Threshold Voltage (V)1.9
Typical Gate Threshold Voltage (V)3.2
Typical Gate to Source Charge (nC)43
Typical Reverse Recovery Time (ns)17
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)119
Operating Junction Temperature (°C)-55 to 200
Typical Input Capacitance @ Vds (pF)3380@400V
Typical Reverse Recovery Charge (nC)308
Maximum Drain Source Resistance (mOhm)24@18V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)22
Maximum Pulsed Drain Current @ TC=25°C (A)220
Typical Reverse Transfer Capacitance @ Vds (pF)49@400V
Description
Trans MOSFET N-CH SiC 650V 119A Automotive 3-Pin(3+Tab) HIP-247 Tube
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