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MOSFETs SCTWA30N120
STMicroelectronics
SCTWA30N120
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Material | SiC |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 5.15(Max) |
| Package Height | 21.07(Max) |
| Package Length | 16.02(Max) |
| Product Category | Power MOSFET |
| Supplier Package | HIP-247 |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 28 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 270000 |
| Typical Gate Charge @ Vgs (nC) | 105@20V |
| Maximum Gate Source Voltage (V) | 25 |
| Typical Turn-On Delay Time (ns) | 19 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 45 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 40 |
| Typical Input Capacitance @ Vds (pF) | 1700@400V |
| Maximum Drain Source Resistance (mOhm) | 100@20V |
| Description |
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