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MOSFETs SI1016X-T1-GE3
Vishay
SI1016X-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Flat |
| PCB changed | 6 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 1.2 |
| Package Height | 0.6(Max) |
| Package Length | 1.7(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SC-89 |
| Maximum IDSS (uA) | 0.1 |
| Process Technology | TrenchFET |
| Standard Package Name | SC |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 280 |
| Typical Gate Charge @ Vgs (nC) | 0.75@4.5V@N Channel|1.5@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | ±6 |
| Typical Output Capacitance (pF) | 16@N Channel|17@P Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.3 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 0.225@N Channel|0.45@P Channel |
| Maximum Gate Threshold Voltage (V) | 1 |
| Minimum Gate Threshold Voltage (V) | 0.45 |
| Typical Gate to Source Charge (nC) | 0.075@N Channel|0.15@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.485@N Channel|0.37@P Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Drain Source Resistance (mOhm) | 700@4.5V@N Channel|1200@4.5V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 1000@N Channel|2000@P Channel |
| Maximum Positive Gate Source Voltage (V) | 6 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.65 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.28 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.515@N Channel|0.39@P Channel |
| Description |
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