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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI1021R-T1-GE3
SI1021R-T1-GE3
MOSFETs SI1021R-T1-GE3
Vishay
SI1021R-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI1021R-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width0.76
Package Height0.7
Package Length1.58
Product CategoryPower MOSFET
Supplier PackageSC-75A
Maximum IDSS (uA)0.025
Process TechnologyTrenchFET
Standard Package NameSC
Number of Elements per Chip1
Maximum Power Dissipation (mW)250
Typical Gate Charge @ Vgs (nC)1.7@15V
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)60
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.19
Typical Input Capacitance @ Vds (pF)23@25V
Maximum Drain Source Resistance (mOhm)4000@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET P-CH 60V 0.19A 3-Pin SC-75A T/R
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