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SI1026X-T1-GE3
SI1026X-T1-GE3
MOSFETs SI1026X-T1-GE3
Vishay
SI1026X-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.2
Package Height0.58
Package Length1.6
Product CategoryPower MOSFET
Supplier PackageSC-89
Standard Package NameSC
Number of Elements per Chip2
Maximum Power Dissipation (mW)250
Typical Gate Charge @ Vgs (nC)600@4.5V
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.305
Typical Input Capacitance @ Vds (pF)30@25V
Maximum Drain Source Resistance (mOhm)1400@10V
Description
Trans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R
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